Structural and electrical characteristics of Ge nanoclusters embedded in Al[sub 2]O[sub 3] gate dielectric.

Structural and electrical characteristics of the metal-insulator-semiconductor (MIS) structures of Al/Al[SUB2]O[SUB3]/Si containing Ge nanoclusters are experimentally demonstrated. Secondary ion mass spectroscopy results indicate the out-diffusion of Ge after annealing at 800 °C in N[SUB2] ambient for 30 min. An increment of leakage current is observed due to the out-diffusion of Ge. Capacitance-voltage studies indicate that annealing can effectively passivate the negatively charged trapping centers. Memory effect of the Ge nanoclusters is verified by the hysteresis in the C - V curves in the annealed sample. [ABSTRACT FROM AUTHOR]