Cite
Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.
MLA
Lu, Yunyou, et al. “Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.” IEEE Transactions on Electron Devices, vol. 62, no. 3, Mar. 2015, pp. 821–27. EBSCOhost, https://doi.org/10.1109/TED.2015.2388735.
APA
Lu, Y., Li, B., Tang, X., Jiang, Q., Yang, S., Tang, Z., & Chen, K. J. (2015). Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation. IEEE Transactions on Electron Devices, 62(3), 821–827. https://doi.org/10.1109/TED.2015.2388735
Chicago
Lu, Yunyou, Baikui Li, Xi Tang, Qimeng Jiang, Shu Yang, Zhikai Tang, and Kevin J. Chen. 2015. “Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation.” IEEE Transactions on Electron Devices 62 (3): 821–27. doi:10.1109/TED.2015.2388735.