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AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss.
- Source :
-
IEEE Transactions on Electron Devices . Mar2015, Vol. 62 Issue 3, p764-768. 5p. - Publication Year :
- 2015
-
Abstract
- A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to −12.8 dB. The device exhibits high crosstalk suppression of −50 dB on a standard Si-substrate (10 $\Omega $ cm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with $c$ -axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 101110072
- Full Text :
- https://doi.org/10.1109/TED.2015.2395443