Cite
Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy.
MLA
Huang, Y. S., et al. “Contactless Electroreflectance, in the Range of 20 K
APA
Huang, Y. S., Pollak, F. H., Park, S. S., Lee, K. Y., & Morkoç, H. (2003). Contactless electroreflectance, in the range of 20 K
Chicago
Huang, Y. S., Fred H. Pollak, S. S. Park, K. Y. Lee, and H. Morkoç. 2003. “Contactless Electroreflectance, in the Range of 20 K