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Low-Loss High-Performance Base-Drive Unit for SiC BJTs.
- Source :
-
IEEE Transactions on Power Electronics . May2012, Vol. 27 Issue 5, p2633-2643. 11p. - Publication Year :
- 2012
-
Abstract
- Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A dual-source base-drive unit with a speed-up capacitor consisting of a low- and a high-voltage source is, therefore, proposed in this paper. As a significant base current is required during the conduction state, the driver power consumption is higher than for other semiconductor switches. In the presented solution, the steady-state base current is provided by a low-voltage source and is optimized for low-power losses. On the contrary, a second source with a higher voltage and speed-up capacitor is used in order to improve the switching performance of the device. The proposed driver has experimentally been compared to other standard driver solutions by using a double-pulse circuit and a 2-kW dc/dc boost converter. Switching times of 20 ns at turn-ON and 35 ns at turn-OFF were recorded. Finally, the efficiency of the converter was determined experimentally at various switching frequencies. From power loss measurements at 100-kHz switching frequency using the proposed driver in a 2-kW dc/dc boost converter, it was found that the efficiency was approximately 99.0%. In the same operating point, the driver power consumption was only 0.08% of the rated power. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 27
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 101264269
- Full Text :
- https://doi.org/10.1109/TPEL.2011.2171722