Markedly distinct growth characteristics of semipolar (1122) and (1122) InGaN epitaxial layers.

We compare metalorganic vapor phase epitaxy of InGaN/GaN heterostructures on semipolar (1122) and (1122) GaN bulk substrates. In incorporation efficiency is higher for (1122) InGaN, which enables higher temperature growth of InGaN and is beneficial for quality improvement. InGaN/GaN quantum wells (QWs) on (1122) show abrupt interfaces, but those on (1122) tend to form three-dimensional nanofacets. Differences in growth temperature and structures of the (1122) and (1122) QWs cause higher internal quantum efficiencies of the (1122) [(1122)] QWs at shorter (longer) wavelengths. [ABSTRACT FROM AUTHOR]