Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores.

In this letter, we report on the resistive switching originating from the rupture/rejuvenation of single-crystalline Cu filaments in a nitrogen-doped porous carbon-based memristive device Cu/ CN0.15/Pt. Cu filaments are confined in conical nanopores in CN0.15 thin films. Dislocations exist in the Cu filaments, resulting in obvious crystal lattice distortions. The Cu/CN0.15/Pt device shows outstanding high temperature retention performance for both ON and OFF states, indicating that it is promising for resistance memory applications. Furthermore, continuous RESET (ON-to-OFF switching) and SET (OFF-to-ON switching) processes could be realized indicating the adaptive learning ability of Cu/CN0.15/Pt, which has potential applications in synaptic devices. [ABSTRACT FROM AUTHOR]