Back to Search
Start Over
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode.
- Source :
-
Applied Physics Letters . 4/23/2015, Vol. 106 Issue 9, p1-4. 4p. 1 Diagram, 3 Graphs. - Publication Year :
- 2015
-
Abstract
- In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoHLED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The detrapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance Ron and/or threshold voltage Vth of the HEMT. The results show that the recovery processes of both dynamic Ron and threshold voltage Vth of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 106
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 101474781
- Full Text :
- https://doi.org/10.1063/1.4914455