The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE.

The relationship between In incorporation in InGaN/GaN quantum wells (QWs) and the plane orientation was investigated by using eight different GaN substrates, including non-polar, semi-polar and polar planes. Applying simultaneous metalorganic vapor-phase epitaxial (MOVPE) growth, a series of InGaN-based LEDs was fabricated on various planar GaN substrates and variations in In content in QWs, surface morphology and electroluminescence peak wavelength were examined. Samples made with the semi-polar ( 11 2 ¯ 2 ) plane and the polar ( 0001 ) plane had the high In contents, while specimens incorporating the non-polar ( 10 1 ¯ 0 ) plane had the low In content. The In content was most readily increased in the QWs produced using ( 11 2 ¯ 2 ) , ( 0001 ) , ( 10 1 ¯ 1 ) and ( 10 1 ¯ 0 ) planes, and the surface morphologies of samples made on the ( 0001 ) , ( 11 2 ¯ 2 ) , ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) planes were smoother than those of samples fabricated on the other planes. [ABSTRACT FROM AUTHOR]