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Remained p-GaN effect to turn-off energy loss (Eoff) in p-GaN gate power devices.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 3/19/2015, Vol. 51 Issue 6, p523-525. 3p. 3 Graphs. - Publication Year :
- 2015
-
Abstract
- In p-GaN gate AlGaN/GaN power devices, the p-GaN etching process to define the gate region is critical to device performance. In some cases, the remained p-GaN in the ungated region can exist as a result of under-etching, and can act like a charge reservoir in the p-GaN gate power device. In this reported work, the effect of this remained p-GaN layer is investigated for the first time. The main effect of the thick remained p-GaN on the ungated region is the increments of turn-off energy loss (Eoff) in spite of the similar turn-on energy loss (Eon). This is related to the hole trapping in the remained p-GaN region which is observed by the change of turn-off gate voltages. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 51
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 101549197
- Full Text :
- https://doi.org/10.1049/el.2014.4448