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Random-telegraph-signal noise in AlGaN/ GaN MIS-HEMT on silicon.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 1/17/2013, Vol. 49 Issue 2, p91-92. 2p. 2 Diagrams, 2 Graphs. - Publication Year :
- 2013
-
Abstract
- The traps in an AlGaN/GaN metal-insulator-silicon-high-electronmobility- transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ACOUSTIC transients
*LOUDNESS
*NONMETALS
*SILICON
*BURST noise
Subjects
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 49
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 101572876
- Full Text :
- https://doi.org/10.1049/el.2012.4285