Cite
5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.
MLA
Zhihua Dong, et al. “5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing.” Electronics Letters (Wiley-Blackwell), vol. 49, no. 3, Jan. 2013, pp. 20–21. EBSCOhost, https://doi.org/10.1049/el.2012.3153.
APA
Zhihua Dong, Shuxin Tan, Yong Cai, Hongwei Chen, Shenghou Liu, Jicheng Xu, Lu Xue, Guohao Yu, Yue Wang, Desheng Zhao, Keyu Hou, Chen, K. J., & Baoshun Zhang. (2013). 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing. Electronics Letters (Wiley-Blackwell), 49(3), 20–21. https://doi.org/10.1049/el.2012.3153
Chicago
Zhihua Dong, Shuxin Tan, Yong Cai, Hongwei Chen, Shenghou Liu, Jicheng Xu, Lu Xue, et al. 2013. “5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing.” Electronics Letters (Wiley-Blackwell) 49 (3): 20–21. doi:10.1049/el.2012.3153.