Back to Search
Start Over
Lumped Dynamic Electrothermal Model of IGBT Module of Inverters.
- Source :
-
IEEE Transactions on Components, Packaging & Manufacturing Technology . Mar2015, Vol. 5 Issue 3, p355-364. 10p. - Publication Year :
- 2015
-
Abstract
- This paper presents a lumped dynamic electrothermal model of an insulated gate bipolar transistor module of inverters. The thermal model consists of a 3-D network of $RC$ cells constructed for time-dependent operation. The network was found to be precise for determining the temperature excursion of diodes and transistors subsequent to time-dependent power losses. Thermal resistances and capacitances accounting for heat spreading and thermal penetration depth effects were introduced. Electrothermal simulations carried out on a 1200 V–300 A module with a time-dependent average power loss were found to be in good agreement with experiments using infrared thermal imaging. This paper focuses on very-low-frequency behavior (less than 1 Hz) at a switching frequency of 10 kHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21563950
- Volume :
- 5
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Components, Packaging & Manufacturing Technology
- Publication Type :
- Academic Journal
- Accession number :
- 101591362
- Full Text :
- https://doi.org/10.1109/TCPMT.2015.2392625