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Dynamic moderation of an electric field using a SiO2 switching layer in TaO x -based ReRAM.
- Source :
-
Physica Status Solidi - Rapid Research Letters . Mar2015, Vol. 9 Issue 3, p166-170. 5p. - Publication Year :
- 2015
-
Abstract
- ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaO x matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRIC fields
*ELECTRIC properties
*OXYGEN
*CHALCOGENS
*REFRIGERANTS
Subjects
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 9
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 101713488
- Full Text :
- https://doi.org/10.1002/pssr.201409531