Back to Search
Start Over
TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Apr2015, Vol. 62 Issue 4, p1079-1084. 6p. - Publication Year :
- 2015
-
Abstract
- TCAD finite-element process simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. While there is overall a good agreement between the simulated and experimental strain profiles, some deviations may occur, due to the presence of extended defects in the strain relaxed Ge buffer layers. This highlights the importance of selection of a strain-free reference in the relaxed Ge or SiGe SRB. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 101734214
- Full Text :
- https://doi.org/10.1109/TED.2015.2397441