Back to Search
Start Over
Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass.
- Source :
-
Thin Solid Films . Mar2015, Vol. 579, p9-13. 5p. - Publication Year :
- 2015
-
Abstract
- In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si:H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si:H surface passivation. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SOLAR cells
*THIN films
*SILICON wafers
*SINGLE crystals
*AMORPHOUS silicon
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 579
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 101920633
- Full Text :
- https://doi.org/10.1016/j.tsf.2015.02.044