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Low-Temperature Deposition of nc-SiOx:H below 400°C Using Magnetron Sputtering.
- Source :
-
Chinese Physics Letters . Apr2015, Vol. 32 Issue 4, p1-1. 1p. - Publication Year :
- 2015
-
Abstract
- Silicon oxide films containing nanocrystalline silicon (nc-SiOx:H) are deposited by co-sputtering technology at low temperatures (<400°C) that are much lower than the typical growth temperature of nc-Si in SiO2. The microstructures and bonding properties are characterized by Raman and FTIR. It is proven that an optimum range of substrate temperatures for the deposition of nc-SiOx:H films is 200–400°C, in which the ratio of transition crystalline silicon decreases, the crystalline fraction is higher, and the hydrogen content is lower. The underlying mechanism is explained by a competitive process between nc-Si Wolmer–Weber growth and oxidation reaction, both of which achieve a balance in the range of 200–400°C. We further implement this technique in the fabrication of multilayered nc-SiOx:H/a-SiOx:H films, which exhibit controllable nc-Si sizes with high crystallization quality. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 32
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 101957928
- Full Text :
- https://doi.org/10.1088/0256-307X/32/4/046802