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Recent Progress in AlGaN-Based Deep-UV LEDs.

Authors :
HIRAYAMA, HIDEKI
FUJIKAWA, SACHIE
KAMATA, NORIHIKO
Source :
Electronics & Communications in Japan. May2015, Vol. 98 Issue 5, p1-8. 8p.
Publication Year :
2015

Abstract

SUMMARY Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are in demand for a wide variety of potential applications, such as sterilization, water and air purification, medical uses, and so on. We have demonstrated 222-351 nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power greater than 30 mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
19429533
Volume :
98
Issue :
5
Database :
Academic Search Index
Journal :
Electronics & Communications in Japan
Publication Type :
Academic Journal
Accession number :
101988763
Full Text :
https://doi.org/10.1002/ecj.11667