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The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers.
- Source :
-
Physica C . May2015, Vol. 512, p1-5. 5p. - Publication Year :
- 2015
-
Abstract
- Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO 2 films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO 2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO 2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO 2 films is believed to be attributed to the nano-effects of the precursors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09214534
- Volume :
- 512
- Database :
- Academic Search Index
- Journal :
- Physica C
- Publication Type :
- Academic Journal
- Accession number :
- 102000199
- Full Text :
- https://doi.org/10.1016/j.physc.2015.02.038