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Diffusion barrier material for Cu metallization using ALD-WN[subx]C[suby].
- Source :
-
Solid State Technology . Jul2003, Vol. 46 Issue 7, p103. 3p. - Publication Year :
- 2003
-
Abstract
- Examines the function of PVD-Titanium based thin films as commonly used materials in diffusion barrier in semiconductor industry. Presentation of the atomic layer deposition; Capabilities of the low resistivity ternary material.
- Subjects :
- *THIN films
*DIFFUSION
*SEMICONDUCTOR industry
*TERNARY superconductors
Subjects
Details
- Language :
- English
- ISSN :
- 0038111X
- Volume :
- 46
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Solid State Technology
- Publication Type :
- Academic Journal
- Accession number :
- 10208494