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Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . May2015, Vol. 212 Issue 5, p1059-1065. 7p. - Publication Year :
- 2015
-
Abstract
- Effective interface engineering techniques in III-nitride heterojunction power devices, aiming at yielding high VTH stability in insulated-gate devices and suppressed current collapse in high-voltage switching operation, are of critical significance to enhance device performance and reliability. In this work, we present an interface enhancement technology featuring in situ low-damage NH3/Ar/N2 pre-gate plasma treatment prior to the ALD-Al2O3 deposition for high-performance III-nitride MIS-HEMTs. It is manifest that this technology can effectively remove the native oxide while forming a monocrystal-like nitridation interfacial-layer (NIL) on the III-nitride surface. The Al2O3(NIL)/GaN/AlGaN/GaN MIS-heterostructures with high-quality interface exhibit well-behaved electrical characteristics, including a small subthreshold swing of ∼64 mV/dec, a small hysteresis of ∼0.09 V, tiny f/T dispersions in the C- V characteristics, and low interface trap density of ∼1 × 1012-6 × 1012 cm−2eV−1. Cross-sectional TEM micrograph of the Al2O3/III-nitride gate stack with a monocrystal-like nitridation interfacial-layer (NIL). [ABSTRACT FROM AUTHOR]
- Subjects :
- *NITRIDATION
*CHEMICAL reactions
*GALLIUM nitride
*HETEROSTRUCTURES
*HETEROJUNCTIONS
Subjects
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 212
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 102602496
- Full Text :
- https://doi.org/10.1002/pssa.201431712