Improvement of reliability and power consumption for SnSb4 phase change film composited with Ga3Sb7 by superlattice-like method.

Superlattice-like (SLL) SnSb4/Ga3Sb7 (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]7 thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property. [ABSTRACT FROM AUTHOR]