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A novel nanoscale SOI MOSFET with Si embedded layer as an effective heat sink.
- Source :
-
International Journal of Electronics . Aug2015, Vol. 102 Issue 8, p1394-1406. 13p. - Publication Year :
- 2015
-
Abstract
- A novel structure such as nanoscale silicon-on-insulator (SOI) MOSFET with silicon embedded layer (SEL-SOI) is proposed to reduce self-heating effects (SHEs) successfully. The SEL as a useful heat sink with high thermal conductivity is inserted inside the buried oxide. The SEL acts like a heat sink and is therefore easily able to distribute the lattice heat throughout the device. We noticed excellent improvement in the thermal performance of the device using two-dimensional and two-carrier device simulation. Our simulation results show that SHE has been dramatically reduced in the proposed structure. In regard to the simulated results, the SEL-SOI structure has shown good performance in comparison with the conventional SOI (C-SOI) structure when utilised in the high temperature applications. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00207217
- Volume :
- 102
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- International Journal of Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 102644661
- Full Text :
- https://doi.org/10.1080/00207217.2014.982213