Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode.

A Ru/V/n-InP Schottky barrier diode (SBD) is fabricated and investigated its electrical and structural properties as a function of annealing temperature. Measurements showed that the barrier height (BH) of the as-deposited Ru/V/n-InP SBD is found to be 0.83 eV ( I – V ) and 1.03 eV ( C – V ). Experimental results indicate that the SBD with high BH and low ideality factors (0.87 eV ( I – V ), 1.20 eV ( C – V ), and 1.12) can be achieved after annealing at 400 °C for 1 min in N 2 atmosphere. Further, it is observed that the BH slightly decreases to 0.85 eV ( I – V ) and 1.09 eV ( C – V ) upon annealing at 500 °C. The BH, ideality factor and series resistance are also determined by Cheung’s functions and Norde method. Further, the energy distribution of interface state density of Ru/V/n-InP SBD is calculated from the forward bias I – V characteristics as a function of annealing temperature. It is found that the interface state density decreases upon annealing at 400 °C and then slightly increases after annealing at 500 °C. The AES and XRD results revealed that the formation of indium phases at the Ru/V/n-InP interface could be the reason for the increase of BH upon annealing at 400 °C. The formation of phosphide phases at the interface may be the cause for the decrease of BH after annealing at 500 °C. The overall surface morphology of Ru/V Schottky contacts is considerably smooth at elevated temperatures. [ABSTRACT FROM AUTHOR]