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Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes.
- Source :
-
IEEE Transactions on Electron Devices . Jun2015, Vol. 62 Issue 6, p2048-2055. 8p. - Publication Year :
- 2015
-
Abstract
- The current-induced perpendicular magnetic anisotropy magnetic tunnel junctions (p-MTJs) offer a number of advantages, such as high density and high speed. As p-MTJs downscale to $\sim 40$ nm, further performance enhancements can be realized thanks to high spin-torque efficiency, i.e., lower critical current density and higher thermal stability. In this paper, we investigate the origin of high spin-torque efficiency and give a phenomenological theory to describe the critical current reduction due to the subvolume activation. Based on various physical theories and structural parameters, a compact model of nanoscale MTJ is developed and demonstrates a satisfactory agreement with experimental results. Dynamic, static, and stochastic switching behaviors have been addressed and validated. Then, we perform mixed simulations for hybrid MTJ/CMOS read/write circuits, magnetic random access memory, and magnetic flip-flop to evaluate their performance. Analyses of energy consumption are given to show the prospect of MTJ technology node miniaturization. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 102874735
- Full Text :
- https://doi.org/10.1109/TED.2015.2414721