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Modeling of Dynamic Operation of T-RAM Cells.
- Source :
-
IEEE Transactions on Electron Devices . Jun2015, Vol. 62 Issue 6, p1905-1911. 7p. - Publication Year :
- 2015
-
Abstract
- This paper presents a comprehensive simulation analysis of the dynamic operation of T-RAM cells. The analysis addresses the evolution of cell electrostatics and of carrier concentrations and flows in the device when the gate voltage undergoes a fast low-to-high switch, as required by both read and write operations. The results clarify, first of all, the basic physics making holes in the p-base the physical element allowing information storage in the device. From this starting point, the working principles exploited for DRAM operation of the memory cell are then explained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 102874758
- Full Text :
- https://doi.org/10.1109/TED.2015.2421556