Cite
AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs.
MLA
Yang, Shu, et al. “AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs.” IEEE Transactions on Electron Devices, vol. 62, no. 6, June 2015, pp. 1870–78. EBSCOhost, https://doi.org/10.1109/TED.2015.2420690.
APA
Yang, S., Liu, S., Lu, Y., Liu, C., & Chen, K. J. (2015). AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs. IEEE Transactions on Electron Devices, 62(6), 1870–1878. https://doi.org/10.1109/TED.2015.2420690
Chicago
Yang, Shu, Shenghou Liu, Yunyou Lu, Cheng Liu, and Kevin J. Chen. 2015. “AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs.” IEEE Transactions on Electron Devices 62 (6): 1870–78. doi:10.1109/TED.2015.2420690.