Cite
Combined Ligand Exchange and Substitution Reactionsin Atomic Layer Deposition of Conformal Ge2Sb2Te5Film for Phase Change Memory Application.
MLA
Taeyong Eom, et al. “Combined Ligand Exchange and Substitution Reactionsin Atomic Layer Deposition of Conformal Ge2Sb2Te5Film for Phase Change Memory Application.” Chemistry of Materials, vol. 27, no. 10, May 2015, pp. 3707–13. EBSCOhost, https://doi.org/10.1021/acs.chemmater.5b00805.
APA
Taeyong Eom, Taehong Gwon, Sijung Yoo, ByungJoon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, & Cheol Seong Hwang. (2015). Combined Ligand Exchange and Substitution Reactionsin Atomic Layer Deposition of Conformal Ge2Sb2Te5Film for Phase Change Memory Application. Chemistry of Materials, 27(10), 3707–3713. https://doi.org/10.1021/acs.chemmater.5b00805
Chicago
Taeyong Eom, Taehong Gwon, Sijung Yoo, ByungJoon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, and Cheol Seong Hwang. 2015. “Combined Ligand Exchange and Substitution Reactionsin Atomic Layer Deposition of Conformal Ge2Sb2Te5Film for Phase Change Memory Application.” Chemistry of Materials 27 (10): 3707–13. doi:10.1021/acs.chemmater.5b00805.