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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.

Authors :
Ping Wang, Yan
Letoublon, Antoine
Nguyen Thanh, Tra
Bahri, Mounib
Largeau, Ludovic
Patriarche, Gilles
Cornet, Charles
Bertru, Nicolas
Le Corre, Alain
Durand, Olivier
Source :
Journal of Applied Crystallography. Jun2015, Vol. 48 Issue 3, p702-710. 9p.
Publication Year :
2015

Abstract

This study is carried out in the context of III-V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218898
Volume :
48
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Crystallography
Publication Type :
Academic Journal
Accession number :
102989923
Full Text :
https://doi.org/10.1107/S1600576715009954