Back to Search
Start Over
Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers.
- Source :
-
Chinese Physics B . Jun2015, Vol. 24 Issue 6, p1-1. 1p. - Publication Year :
- 2015
-
Abstract
- Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 24
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 102999858
- Full Text :
- https://doi.org/10.1088/1674-1056/24/6/064211