Solar-Blind Avalanche Photodetector Based On SingleZnO–Ga2O3Core–Shell Microwire.

High-performance solar-blind (200–280nm) avalanche photodetectors (APDs) were fabricated based on highlycrystallized ZnO–Ga2O3core–shellmicrowires. The responsivity can reach up to 1.3 × 103A/W under −6 V bias. Moreover, the corresponding detectivitywas as high as 9.91 × 1014cm·Hz1/2/W. The device also showed a fast response, with a rise time shorterthan 20 μs and a decay time of 42 μs. The quality of thedetectors in solar-blind waveband is comparable to or even higherthan that of commercial Si APD (APD120A2 from Thorlabs Inc.), witha responsivity ∼8 A/W, detectivity ∼1012cm·Hz1/2/W, and response time ∼20 ns. The high performanceof this APD make it highly suitable for practical applications assolar-blind photodetectors, and this core–shell microstructureheterojunction design method would provide a new approach for realizingan APD device. [ABSTRACT FROM AUTHOR]