A Precision CMOS Voltage Reference Exploiting Silicon Bandgap Narrowing Effect.

A compact voltage-mode bandgap voltage reference (BGR) is presented. Instead of using overhead circuits, the silicon bandgap narrowing effect is exploited for bipolar junction transistor’s (BJT) curvature reduction and residual curvature correction. Prototype measurements in a 0.18- \mu \textm standard CMOS process show that the curvature of the BJT is effectively reduced from its inherent 3.6 mV to 1.4 mV. The proposed BGR measures a minimum temperature coefficient of 8.7 ppm/ °C from −55 °C to 125 °C by batch trimming one resistor. After a curvature trimming, it further improves to 4.1 ppm/ °C. The BGR has a minimum supply voltage of 1.3 V, 4.3 \mu \textA nominal current consumption, 0.03%/V line sensitivity, and 2 mV/mA load sensitivity at 25 °. The output rms noise in the $0.1\sim 10$ -Hz band measures 10.23 \mu \text{V} . [ABSTRACT FROM PUBLISHER]