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Erratum: A Compact Scattering Model for the Nanoscale Double-Gate MOSFET.

Authors :
Rahman, Anisur
Lundstrom, Mark S.
Source :
IEEE Transactions on Electron Devices. Jul2015, Vol. 62 Issue 7, p2367-2367. 1p.
Publication Year :
2015

Abstract

Corrections to formulas and equations for the paper "A Compact Scattering Model for the Nanoscale Double-Gate MOSFET" (Rahman, A. and Lundstrom, M.S.; IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 481?489, Mar. 2002) )are presented. [ABSTRACT FROM PUBLISHER]

Subjects

Subjects :
*METAL oxide semiconductor field-effect transistors
*NANOELECTROMECHANICAL systems

Details

Language :
English
ISSN :
00189383
Volume :
62
Issue :
7
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
103304500
Full Text :
https://doi.org/10.1109/TED.2015.2437276
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