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The investigation of Al-doped ZnO as an electron transporting layer for visible-blind ultraviolet photodetector based on n-ZnO nanorods/p-Si heterojunction.
- Source :
-
Materials Science in Semiconductor Processing . Oct2015, Vol. 38, p67-71. 5p. - Publication Year :
- 2015
-
Abstract
- An n -ZnO nanorods/ p -Si heterojunction photodetector with Al-doped ZnO (AZO) as an electron transporting layer was fabricated. The heterojunction with 20 nm AZO film showed a better characteristic than that of the device without AZO, and it displays a rectification ratio of 8470 at ±3 V and a turn-on voltage of 1.8 V. Also, based on spectral responsivity measurement, the device with AZO coating showed higher responsivity and better visible-blind detectivity than those without AZO, and the peak responsivity of the photodetector with AZO was as high as ~0.49 A/W at 354 nm. Furthermore, the photodetector with AZO layer showed a bigger UV–visible responsivity ratio ( R 354 nm / R 546 nm ) than that of the photodetector without AZO coating at −2 V. The role of AZO layer was illustrated through energy band theory and the electron transport mechanism. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13698001
- Volume :
- 38
- Database :
- Academic Search Index
- Journal :
- Materials Science in Semiconductor Processing
- Publication Type :
- Academic Journal
- Accession number :
- 103427274
- Full Text :
- https://doi.org/10.1016/j.mssp.2015.04.005