Cite
Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices.
MLA
Singh, Jitendra, et al. “Growth of Residual Stress-Free ZnO Films on SiO2/Si Substrate at Room Temperature for MEMS Devices.” AIP Advances, vol. 5, no. 6, June 2015, pp. 1–8. EBSCOhost, https://doi.org/10.1063/1.4922911.
APA
Singh, J., Ranwa, S., Akhtar, J., & Kumar, M. (2015). Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices. AIP Advances, 5(6), 1–8. https://doi.org/10.1063/1.4922911
Chicago
Singh, Jitendra, Sapana Ranwa, Jamil Akhtar, and Mahesh Kumar. 2015. “Growth of Residual Stress-Free ZnO Films on SiO2/Si Substrate at Room Temperature for MEMS Devices.” AIP Advances 5 (6): 1–8. doi:10.1063/1.4922911.