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A 1.1-Gbit/s 10-GHz Outphasing Modulator With 23-dBm Output Power and 60-dB Dynamic Range in 45-nm CMOS SOI.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Jul2015, Vol. 63 Issue 7, p2289-2300. 12p. - Publication Year :
- 2015
-
Abstract
- A 10-GHz outphasing modulator is implemented in a 45-nm CMOS silicon-on-insulator process. The modulator is designed to provide high linearity and can operate at high data rates by using 256-QAM while maintaining low error vector magnitude (EVM). Four high-speed 10-bit digital-to-analog converters (DACs) are integrated with dual in-phase and quadrature upconverters. To deliver high output power to an off-chip power amplifier, stacked field-effect transistor current buffers are used to isolate the modulator from the load and mitigate device breakdown. As a result, this modulator delivers 23 dBm to a differential 100-\Omega load. The high-resolution DACs provide a fine control of the phase between the outphased signals and support more than 60 dB of dynamic range and power steps smaller than 1 dB over the entire output power range. The outphasing modulator demonstrates an EVM of 2.2% at 80 Mbit/s and an EVM of 3.4% at 1.1 Gbit/s for 256-QAM. To our knowledge, this is the first demonstration of an outphasing modulator operating above 1 Gb/s. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 63
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 103665981
- Full Text :
- https://doi.org/10.1109/TMTT.2015.2435005