Cite
Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors.
MLA
Fleming, R. M., et al. “Injection Deep Level Transient Spectroscopy: An Improved Method for Measuring Capture Rates of Hot Carriers in Semiconductors.” Journal of Applied Physics, vol. 118, no. 1, July 2015, pp. 1–8. EBSCOhost, https://doi.org/10.1063/1.4923358.
APA
Fleming, R. M., Seager, C. H., Lang, D. V., & Campbell, J. M. (2015). Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors. Journal of Applied Physics, 118(1), 1–8. https://doi.org/10.1063/1.4923358
Chicago
Fleming, R. M., C. H. Seager, D. V. Lang, and J. M. Campbell. 2015. “Injection Deep Level Transient Spectroscopy: An Improved Method for Measuring Capture Rates of Hot Carriers in Semiconductors.” Journal of Applied Physics 118 (1): 1–8. doi:10.1063/1.4923358.