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Fabrication of Tunnel Junctions for Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography.

Authors :
Stevenson, Thomas R.
Wen-Ting Hsieh
Li, Mary J.
Rhee, Kee W.
Schoelkopf, Robert J.
Stahle, Carl M.
Teufel, John D.
Source :
IEEE Transactions on Applied Superconductivity. Jun2003 Part 1 of 3, Vol. 13 Issue 2, p1139. 4p. 2 Diagrams, 1 Chart, 3 Graphs.
Publication Year :
2003

Abstract

This paper describes the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-mm wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper describes how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10518223
Volume :
13
Issue :
2
Database :
Academic Search Index
Journal :
IEEE Transactions on Applied Superconductivity
Publication Type :
Academic Journal
Accession number :
10433051
Full Text :
https://doi.org/10.1109/TASC.2003.814175