Back to Search
Start Over
Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET
- Source :
-
Solid-State Electronics . Nov2003, Vol. 47 Issue 11, p2131. 4p. - Publication Year :
- 2003
-
Abstract
- We propose a new structure, asymmetric gate stack (ASYMGAS)-MOSFET and its 2-D analytical model. There is two-layer gate stack oxide near the drain and single gate oxide near the source. The model predicts a step function profile in the potential along the channel, which ensures reduced DIBL. In ASYMGAS-MOSFET, the average electric field in the channel is enhanced, and therefore electron velocity, near the source, which improves the overall carrier transport efficiency. The results so obtained are verified using a two-dimensional device simulator, ATLAS, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.15 μm. Thus, confirming the validity of our model. [Copyright &y& Elsevier]
- Subjects :
- *METAL oxide semiconductor field-effect transistors
*OXIDES
*ELECTRIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 47
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 10503060
- Full Text :
- https://doi.org/10.1016/S0038-1101(03)00221-1