Self and Impurity Diffusion in Si - Simulation by Chandrasekhar-Hopping.

A novel attempt is made to study the diffusion in silicon by a simulation procedure known as Chandrashekar-hopping. The method employed by Chandrasekhar on the astronomical bodies is brought down to the microscopic real systems in the present investigation and the procedure is applied for the study of self and impurity diffusion in silicon. The Fokker-Planck form of the Fick's law is used and a smooth continuous position probability density for the diffusing particle ω( r , t ), which represents the position of the diffusing particle at any time t , is used for the evaluation of the diffusion constant. The results agree reasonably well with the available experimental and theoretically reported values. The existence of ' traps ' in the semi-conducting media is also clearly demonstrated. [ABSTRACT FROM AUTHOR]