Radiation damage of silicon microstrip detectors by high doses of <f>200 MeV</f> electrons

A single-sided N-type silicon microstrip detector (SSD) was directly irradiated by a <f>200 MeV</f> electron beam in order to examine radiation hardness. The leakage current increased linearly with the fluence up to <f>5×1014/cm2</f>. The SSD efficiency began to drop at <f>2×1014/cm2</f>, but was recovered by increasing the bias to <f>150 V</f> and was maintained up to <f>3×1014/cm2</f>. Noise figures increased slightly, but were within acceptable levels. Our results show that SSDs can operate up to a <f>200 MeV</f> electron fluence of <f>3×1014/cm2</f> without any significant degradation in performance. [Copyright &y& Elsevier]