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Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide.
- Source :
-
Journal of the American Ceramic Society . Jul2015, Vol. 98 Issue 7, p2153-2158. 6p. 1 Diagram, 2 Charts, 6 Graphs. - Publication Year :
- 2015
-
Abstract
- The electronic structure of polymer-derived amorphous silicon carbide pyrolyzed at different temperatures was investigated by combining measurements of their temperature-dependent conductivity and optical absorption. By comparing the experimental results with theoretical models, the parameters such as conduction band, band-tail, defect energy, and Fermi energy were determined. The results revealed that band gap and band-tail width decreased with increasing pyrolysis temperature. Furthermore, it was found that electrons transport followed a band-tail hopping mechanism, rather than variable range hopping. These results were discussed in accordance with the microstructural evolutions of the material. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00027820
- Volume :
- 98
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of the American Ceramic Society
- Publication Type :
- Academic Journal
- Accession number :
- 108336841
- Full Text :
- https://doi.org/10.1111/jace.13598