Cite
Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate.
MLA
Zhang, Chuan, et al. “Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate.” IEEE Transactions on Electron Devices, vol. 62, no. 8, Aug. 2015, pp. 2475–80. EBSCOhost, https://doi.org/10.1109/TED.2015.2446504.
APA
Zhang, C., Wang, M., Xie, B., Wen, C. P., Wang, J., Hao, Y., Wu, W., Chen, K. J., & Shen, B. (2015). Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate. IEEE Transactions on Electron Devices, 62(8), 2475–2480. https://doi.org/10.1109/TED.2015.2446504
Chicago
Zhang, Chuan, Maojun Wang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, and Bo Shen. 2015. “Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate.” IEEE Transactions on Electron Devices 62 (8): 2475–80. doi:10.1109/TED.2015.2446504.