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Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy.
- Source :
-
Applied Physics Letters . 7/22/2015, Vol. 107 Issue 3, p1-5. 5p. 5 Graphs. - Publication Year :
- 2015
-
Abstract
- The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-tometal transition (IMT) of undoped and tungsten (W)-doped VO2 film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO2 film and also reduces the pump fluence threshold of photo-induced IMT in VO2 film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO2, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 108546795
- Full Text :
- https://doi.org/10.1063/1.4927383