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Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping.
- Source :
-
Journal of Crystal Growth . Sep2015, Vol. 426, p75-81. 7p. - Publication Year :
- 2015
-
Abstract
- Incorporation of source–drain stressors (S/D) for FinFETs to boost the channel mobility is a promising scaling approach. Typically SiGe:B S/D stressors are used for p FinFETs and Si:C:P S/D stressors for n FinFETs. The deposition of such Si:C:P S/D stressors requires a low thermal budget to freeze the C in substitutional sites and also to avoid problems associated with surface reflow of Si fins. In this work, we report the material properties of Si:C and Si:C:P epitaxial layers grown by chemical vapor deposition, in terms of their defectivity and C incorporation as a function of different process conditions. The undoped Si:C layers were found to be defect free for total C contents below 1%. Above this concentration defects were incorporated and the defect density increased with increasing C content. Abrupt epitaxial breakdown occurred beyond a total C content of 2.3% resulting in amorphous layers. P doping of Si:C layers brought down the resistivity and also thicker Si:C:P films underwent epitaxial breakdown. Additionally, the use of nitrogen instead of hydrogen as carrier gas resulted in an increase of the growth rate and substitutional C incorporation both by a factor of two, while the surface defect density reduced. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 426
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 108654385
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2015.05.019