Cite
Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors.
MLA
Jiang, Ying, et al. “Reduction of Leakage Current by O2 Plasma Treatment for Device Isolation of AlGaN/GaN Heterojunction Field-Effect Transistors.” Applied Surface Science, vol. 351, Oct. 2015, pp. 1155–60. EBSCOhost, https://doi.org/10.1016/j.apsusc.2015.06.092.
APA
Jiang, Y., Wang, Q., Zhang, F., Li, L., Zhou, D., Liu, Y., Wang, D., & Ao, J.-P. (2015). Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors. Applied Surface Science, 351, 1155–1160. https://doi.org/10.1016/j.apsusc.2015.06.092
Chicago
Jiang, Ying, Qingpeng Wang, Fuzhe Zhang, Liuan Li, Deqiu Zhou, Yang Liu, Dejun Wang, and Jin-Ping Ao. 2015. “Reduction of Leakage Current by O2 Plasma Treatment for Device Isolation of AlGaN/GaN Heterojunction Field-Effect Transistors.” Applied Surface Science 351 (October): 1155–60. doi:10.1016/j.apsusc.2015.06.092.