Steep Subthreshold Swing n- and p-Channel Operationof Bendable Feedback Field-Effect Transistors with p–i–n㖩⫞ by Dual-Top-Gate Voltage Modulation.

Inthis study, we present the steep switching characteristics of bendablefeedback field-effect transistors (FBFETs) consisting of p–i–n nanowires (NWs) and dual-top-gatestructures. As a result of a positive feedback loop in the intrinsicchannel region, our FBFET features the outstanding switching characteristicsof an on/off current ratio of approximately 106, and pointsubthreshold swings (SSs) of 18–19 mV/dec in the n-channeloperation mode and of 10–23 mV/dec in the p-channel operationmode. Not only can these devices operate in n- or p-channel modes,their switching characteristics can also be modulated by adjustingthe gate biases. Moreover, the device maintains its steep SS characteristics,even when the substrate is bent. This study demonstrates the promisingpotential of bendable NW FBFETs for use as low-power components inintegrated circuits or memory devices. [ABSTRACT FROM AUTHOR]