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Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements.
- Source :
-
Applied Physics Letters . 8/17/2015, Vol. 107 Issue 7, p072101-1-072101-4. 4p. 6 Graphs. - Publication Year :
- 2015
-
Abstract
- The effective bandgap is a crucial design parameter of heterojunction tunneling field-effect transistors. In this letter, we demonstrate a method to measure the effective bandgap directly from the band-to-band tunneling current of a heterojunction Esaki diode, of which we only require knowledge of the electrostatic potential profile. The method is based on a characteristic exponentially increasing current with forward bias, caused by sharp energy filtering at cryogenic temperature. We apply this method experimentally to a n+In0.53Ga0.47As/pGaAs0.5Sb0.5 Esaki diode and define requirements to apply it to other heterojunctions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 109042644
- Full Text :
- https://doi.org/10.1063/1.4928761