Cite
Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer.
MLA
Qiao, Ming, et al. “Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer.” IEEE Transactions on Electron Devices, vol. 62, no. 9, Sept. 2015, pp. 2933–39. EBSCOhost, https://doi.org/10.1109/TED.2015.2448120.
APA
Qiao, M., Wang, Y., Zhou, X., Jin, F., Wang, H., Wang, Z., Li, Z., & Zhang, B. (2015). Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer. IEEE Transactions on Electron Devices, 62(9), 2933–2939. https://doi.org/10.1109/TED.2015.2448120
Chicago
Qiao, Ming, Yuru Wang, Xin Zhou, Feng Jin, Huihui Wang, Zhuo Wang, Zhaoji Li, and Bo Zhang. 2015. “Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer.” IEEE Transactions on Electron Devices 62 (9): 2933–39. doi:10.1109/TED.2015.2448120.