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An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance.
- Source :
-
IEEE Transactions on Electron Devices . Sep2015, Vol. 62 Issue 9, p2786-2793. 8p. - Publication Year :
- 2015
-
Abstract
- In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on gm -degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 109065867
- Full Text :
- https://doi.org/10.1109/TED.2015.2457781